? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 100 v v dgr t j = 25 c to 150 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c (chip capability) 200 a i lrms lead current limit, (rms) 160 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c 100 a e as t c = 25 c5 j p d t c = 25 c 1040 w t j -55...+150 c t jm 150 c t stg -55...+150 c t l 1.6mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (ixtk) 1.13/10 nm/lb.in. f c mounting force (ixtx) 20..120 / 4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 100 v v gs(th) v ds = v gs , i d = 3ma 2.0 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 11 m linear l2 tm power mosfet w/ extended fbsoa ixtk 200n10l2 ixtx 200n10l2 n-channel enhancement mode guaranteed fbsoa avalanche rated v dss = 100v i d25 = 200a r ds(on) < 11m ds100239(2/10) advance technical information features z designed for linear operation z avalanche rated z guaranteed fbsoa at 75 c advantages z easy to mount z space savings z high power density applications z solid state circuit breakers z soft start controls z linear amplifiers z programmable loads z current regulators g = gate d = drain s = source tab = drain to-264 (ixtk) g d s g d s plus247(ixtx) tab tab
ixys reserves the right to change limits, test conditions, and dimensions. ixtk200n10l2 IXTX200N10L2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 55 73 90 s c iss 23 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 3200 pf c rss 610 pf t d(on) 40 ns t r 225 ns t d(off) 127 ns t f 27 ns q g(on) 540 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 115 nc q gd 226 nc r thjc 0.12 c/w r thcs 0.15 c/w safe-operating-area specification symbol test conditions characteristic values min. typ. max. soa v ds = 100v, i d = 6.25a, t c = 75 c, tp = 5s 625 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 200 a i sm repetitive, pulse width limited by t jm 800 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 245 ns i rm 24.4 a q rm 3.0 c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 100a, -di/dt = 100a/ s, v r = 50v, v gs = 0v to-264 (ixtk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. 1 - gate 2 - drain 3 - source 4 - drain dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain 3 - source plus 247 tm (ixtx) outline
? 2010 ixys corporation, all rights reserved ixtk200n10l2 IXTX200N10L2 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 7 v 8 v 6 v 4 v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 1012141618 v ds - volts i d - amperes v gs = 20v 6 v 8 v 7 v 12 v 10 v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 4 v 6v 8v fig. 4. r ds(on) normalized to i d = 100a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200a i d = 100a fig. 5. r ds(on) normalized to i d = 100a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 20v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. ixtk200n10l2 IXTX200N10L2 fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance ggg 0.200 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 q g - nanocoulombs v gs - volts v ds = 50v i d = 100a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
? 2010 ixys corporation, all rights reserved ixtk200n10l2 IXTX200N10L2 ixys ref: t_200n10l2(9r)1-26-10 fig. 13. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms external lead limit fig. 14. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 100ms 10ms dc
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